The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 28, 2020
Nichia Corporation, Anan, JP;
Eiji Muramoto, Tokushima, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A method of manufacturing a semiconductor device includes: providing a first member comprising: a first substrate, a semiconductor layer disposed on the first substrate and defining a first recess, and a first metal layer disposed above at least a portion other than the first recess, the first member defining a second recess in a region of a surface of the first member including a region directly above the first recess; providing a second member comprising: a second substrate, a second metal layer on or above the second substrate, a third metal layer on the second metal layer, and a fourth metal layer on the third metal layer; and bonding the first member and the second member together by heating the first metal layer and the fourth metal layer while facing each other. The third metal layer impedes interdiffusion between the second metal layer and the fourth metal layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile