The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Sep. 14, 2020
Semiq Incorporated, Lake Forest, CA (US);
Rahul R. Potera, Irvine, CA (US);
SEMIQ INCORPORATED, Lake Forest, CA (US);
Abstract
A silicon carbide MOSFET includes a plurality of first and second trenches each of which extends a predetermined vertical distance from the top of a source down through a body region and into a current spreading layer (CSL). An insulated gate member is disposed in each first trench. The first trenches are each arranged in a wave-shaped pattern that extends in first and second lateral directions. Each of the second trenches is disposed between a pair of adjacent first trenches in the first lateral direction. A shielding region extends vertically from the bottom of each of the second trenches down into a drift region. A top metal layer fill each of the second trenches and electrically contacts the source region, the body region, the CSL, and the shielding region. A bottom metal layer electrically contacts the drain region.