The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 20, 2019
Guangdong Zhineng Technology Co., Ltd., Guangzhou, CN;
Zilan Li, Guangzhou, CN;
GUANGDONG ZHINENG TECHNOLOGY CO., LTD., Guangdong, CN;
Abstract
The present disclosure provides a semiconductor device and a method of fabricating the same. The device comprises a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; the first semiconductor layer having a smaller forbidden band width than the second semiconductor layer; and a first electrode, a second electrode, and a third electrode formed on the second semiconductor layer; the first semiconductor layer corresponding to the third electrode has a strongly P-type doped first region, and the first semiconductor layer corresponding to the second electrode has a weakly P-type doped second region. The present disclosure contributes to achievement of one of the effects of: reducing a gate leakage current, having a high threshold voltage, high power, and high reliability, allowing a low on-resistance and a normally-off state of the device, and providing a stable threshold voltage, so that the semiconductor device has good switching characteristics.