The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Oct. 24, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jaume Roig-Guitart, Oudenaarde, BE;

Aurore Constant, Oudenaarde, BE;

Frederick Johan G Declercq, Harelbeke, BE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/2003 (2013.01); H01L 29/404 (2013.01); H01L 29/42324 (2013.01); H01L 29/42364 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

A semiconductor transistor device includes a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor. The semiconductor transistor device further includes a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor.


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