The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Sep. 07, 2018
Kokusai Electric Corporation, Tokyo, JP;
Masanori Nakayama, Toyama, JP;
Yuichiro Takeshima, Toyama, JP;
Hiroto Igawa, Toyama, JP;
Katsunori Funaki, Toyama, JP;
Kokusai Electric Corporation, Tokyo, JP;
Abstract
Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.