The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Feb. 27, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Syunki Narita, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, first base regions of the second conductivity type, second base regions of the second conductivity type, gate insulating films, gate electrodes, a first electrode, a second electrode, and trenches. Between the trenches, the first base regions are in contact with the second semiconductor layer. The second base regions are provided at positions facing the trenches in a depth direction, respectively, and have a first surface facing the second electrode and a second surface facing the first electrode, where a curvature of the first surface is smaller than a curvature of the second surface.