The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Apr. 06, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Minoru Ikarashi, Kanagawa, JP;

Takeyuki Sone, Kanagawa, JP;

Seiji Nonoguchi, Kanagawa, JP;

Hiroaki Sei, Kanagawa, JP;

Kazuhiro Ohba, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); G11C 5/06 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); G11C 5/063 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1293 (2013.01); H01L 45/141 (2013.01); H01L 45/148 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01);
Abstract

There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.


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