The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Nov. 06, 2018
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Yuanliang Liu, San Jose, CA (US);

Vincent Venezia, Los Gatos, CA (US);

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); H01L 31/0288 (2006.01); H01L 27/146 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H01L 21/266 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14687 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01);
Abstract

Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is disposed on the first semiconductor material, and a plurality of second doped regions is disposed in the second semiconductor. The plurality of second doped regions is electrically coupled to the plurality of first doped regions, and the plurality of second doped regions is part of the plurality of photodiodes.


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