The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Jun. 26, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yeon Keon Moon, Hwaseong-si, KR;

Kano Masataka, Hwaseong-si, KR;

Myoung Hwa Kim, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G09G 3/3696 (2013.01); H01L 27/1218 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A display device in which a display area and a non-display area are defined, the display device including a wiring substrate, the wiring substrate including: a base substrate; a first thin film transistor disposed on the base substrate, located in the non-display area, and including a first gate pattern, a first semiconductor pattern disposed on the first gate pattern, a first source pattern disposed on the first semiconductor pattern, and a first drain pattern disposed on the first semiconductor pattern and spaced apart from the first source pattern; and a second thin film transistor disposed on the base substrate and located in the display area. A first channel width of the first thin film transistor is greater than a first overlap length of the first gate pattern, the first semiconductor pattern, and the first drain pattern.


Find Patent Forward Citations

Loading…