The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Feb. 14, 2019
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Tatsuya Kato, Yokkaichi, JP;

Wataru Sakamoto, Yokkaichi, JP;

Fumitaka Arai, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11548 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11519 (2013.01); H01L 27/11548 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first insulating film, a second insulating film, and a contact. The semiconductor pillars are provided on the substrate, extend in a first direction crossing an upper surface of the substrate, and are arranged along second and third directions being parallel to the upper surface and crossing each other. The first electrode films extend in the third direction. The second electrode film is provided between the semiconductor pillars and the first electrode films. The first insulating film is provided between the semiconductor pillars and the second electrode film. The second insulating film is provided between the second electrode film and the first electrode films. The contact is provided at a position on the third direction of the semiconductor pillars and is connected to the first electrode films.


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