Semiconductor structure and integrated circuit

Abstract

A semiconductor structure and an integrated circuit are provided. The semiconductor structure includes first well regions and a second well region in a semiconductor substrate; first transistors within the first wells; second transistors within the second well; and bit lines. The first wells are separately arranged along a first direction and a second direction. The second well continuously spreads between the first wells. Each first transistor and one of the second transistors are adjacent and connected to each other via a common source or common drain. The common drain or common source is electrically connected to a storage capacitor, and the electrically connected first and second transistors as well as the storage capacitor form a memory cell. The bit lines respectively extend between adjacent rows of the first wells. Adjacent memory cells arranged along the second direction are electrically connected to the same bit line.