The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jul. 15, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jeonglim Kim, Seoul, KR;
Sunghwan Bae, Seoul, KR;
Seulki Hong, Seoul, KR;
Myungsoo Noh, Seoul, KR;
Moongi Cho, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device includes: a substrate including a fin type active region extending in a first direction; a gate structure intersecting the fin type active region and extending in a second direction perpendicular to the first direction; a source/drain region on sides of the gate structure; a gate isolation insulating layer contacting an end of the gate structure; a first contact connected to the source/drain region; and a second contact connected to the source/drain region, the second contact being longer in the second direction than the first contact, the second contact includes a first portion extending in the second direction from an area adjacent to one side of the gate structure beyond the end of the gate structure and facing a sidewall of the gate structure, and a second portion facing a sidewall of the gate isolation insulating layer, and the first portion is wider than the second portion.