The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 06, 2020
Applicant:
Db Hitek Co., Ltd., Seoul, KR;
Inventors:
Hyun-Jin Kim, Seoul, KR;
Sang-Gil Kim, Iksan-si, KR;
Seung-Hyun Eom, Chungcheongbuk-do, KR;
Yong-Jin Kim, Cheongju-si, KR;
Assignee:
DB HiTek Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/8249 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/8249 (2013.01); H01L 29/0649 (2013.01); H01L 29/45 (2013.01);
Abstract
A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.