The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Feb. 07, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Carlo Marbella, Singapore, SG;

Swee Guan Chan, Melaka, MY;

Eung San Cho, Torrance, CA (US);

Navas Khan Oratti Kalandar, Singapore, SG;

Assignees:

Infineon Technologies AG, Neubiberg, DE;

Infineon Technologies Americas Corp., El Segundo, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/0273 (2013.01); H01L 24/13 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13147 (2013.01);
Abstract

A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.


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