The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Apr. 21, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Teng-Yen Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/82 (2013.01);
Abstract

The present application discloses a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps reducing parasitic capacitance and a method for fabricating the semiconductor device. The semiconductor device includes a connection structure including a connecting dielectric layer, a first protection structure positioned in the connecting dielectric layer and positioned adjacent to a perimeter of the connecting dielectric layer, and a plurality of air gaps positioned on sides of the first protection structure. The first protection structure is formed of copper, aluminum, titanium, tungsten, cobalt, the like, or a combination thereof.


Find Patent Forward Citations

Huang, Teng-Yen. (2021). Semiconductor device with protection structure and air gaps and method for fabricating the same (U.S. Patent No. 11152311). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11152311

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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