The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jan. 22, 2019
Applicant:
Waseda University, Tokyo, JP;
Inventor:
Kohei Tatsumi, Tokyo, JP;
Assignee:
WASEDA UNIVERSITY, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/482 (2006.01); H01L 23/12 (2006.01); H01L 23/492 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/482 (2013.01); H01L 21/4853 (2013.01); H01L 21/561 (2013.01); H01L 23/12 (2013.01); H01L 23/367 (2013.01); H01L 23/492 (2013.01); H01L 23/5389 (2013.01); H01L 25/07 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01);
Abstract
A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.