The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Nov. 16, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Yasuyuki Sanda, Tokyo, JP;
Dai Nakajima, Tokyo, JP;
Haruna Tada, Tokyo, JP;
Hodaka Rokubuichi, Tokyo, JP;
Kiyofumi Kitai, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/565 (2013.01); H01L 23/29 (2013.01); H01L 23/293 (2013.01); H01L 23/3107 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01);
Abstract
A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.