logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11152247 B1

PDFFull Text
Date of Patent:
Oct. 19, 2021

Filed:

Jun. 19, 2020

Semiconductor device and manufacturing method thereof

Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Kazunobu Kuwazawa, Sakata, JP;

Shigeyuki Sakuma, Sakata, JP;

Hiroaki Nitta, Sakata, JP;

Mitsuo Sekisawa, Sakata, JP;

Takehiro Endo, Sakata, JP;

Assignee:

SEIKO EPSON CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Hajar Kolahdouzan

Int. Cl.
CPC ...
H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/78 (2006.01); H01L 29/866 (2006.01); H01L 29/94 (2006.01); H01L 29/735 (2006.01); H01L 21/8224 (2006.01); H01L 21/8228 (2006.01); H01L 27/092 (2006.01); H01L 27/082 (2006.01); H01L 21/225 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/2253 (2013.01); H01L 21/8224 (2013.01); H01L 21/8228 (2013.01); H01L 27/0676 (2013.01); H01L 27/0814 (2013.01); H01L 27/0821 (2013.01); H01L 27/0922 (2013.01); H01L 29/0684 (2013.01); H01L 29/0692 (2013.01); H01L 29/6625 (2013.01); H01L 29/66106 (2013.01); H01L 29/66181 (2013.01); H01L 29/66272 (2013.01); H01L 29/66681 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/7816 (2013.01); H01L 29/866 (2013.01); H01L 29/94 (2013.01); H01L 29/0626 (2013.01); H01L 29/0878 (2013.01); H01L 29/1083 (2013.01); H01L 29/42368 (2013.01);
Abstract

A semiconductor device is provided in which a zener diode having a desired breakdown voltage and a capacitor in which voltage dependence of capacitance is reduced are mounted together, and various circuits are realized. The semiconductor device includes: a semiconductor layer; a first conductivity type well that is arranged in a first region of the semiconductor layer; a first conductivity type first impurity diffusion region that is arranged in the well; a first conductivity type second impurity diffusion region that is arranged in a second region of the semiconductor layer; an insulating film that is arranged on the second impurity diffusion region; an electrode that is arranged on the insulating film; and a second conductivity type third impurity diffusion region that is arranged at least on the first impurity diffusion region.

Find Patent Forward Citations

Loading…