The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Mar. 30, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Katsuhiro Shimazu, Seongnam-si, KR;

In-Sung Hwang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G06F 7/58 (2006.01); G06F 17/16 (2006.01); G06F 5/00 (2006.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
H01L 21/67276 (2013.01); G06F 5/00 (2013.01); G06F 7/588 (2013.01); G06F 17/16 (2013.01); G06F 30/398 (2020.01);
Abstract

A method for predicting characteristics of semiconductor devices includes collecting first data for a plurality of first characteristics from first semiconductor devices already in mass production, and collecting second data for the first characteristics and third data for a plurality of second characteristics from at least one second semiconductor device manufactured as an experimental sample before beginning the mass production. A covariance matrix is then obtained based on the first, second, and third data, and a mean vector for third semiconductor devices to be in the mass production is determined. Prediction data for third semiconductor devices is then generated based on the covariance matrix and the mean vector.


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