The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Oct. 24, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jung-Mi Ko, Gyeonggi-do, KR;

Ji-Hwan Kim, Seoul, KR;

Seong-Je Park, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 12/0882 (2016.01); G06F 12/02 (2006.01); G11C 16/08 (2006.01); G06F 3/06 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0656 (2013.01); G06F 3/0688 (2013.01); G06F 12/0246 (2013.01); G06F 12/0882 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of memory cells, a plurality of first even page buffers suitable for reading data from first even-numbered memory cells among the plurality of memory cells, and storing the read data, a plurality of first odd page buffers suitable for reading data from first odd-numbered memory cells among the plurality of memory cells, and storing the read data, and a plurality of first cache buffers corresponding to the first even page buffers, suitable for storing data received through a first common node from the first even page buffers, and a plurality of second cache buffers corresponding to the first odd page buffers, and suitable for storing data received through the first common node from the first odd page buffers.


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