The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Aug. 02, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Zhe Wu, Seoul, KR;

Ja Bin Lee, Hwaseong-si, KR;

Jin Woo Lee, Seoul, KR;

Kyu Bong Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); H01L 45/144 (2013.01); G11C 2013/0052 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/72 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

A memory device includes a word line, a bit line intersecting the word line, and a memory cell at an intersection of the word line and the bit line. The memory cell includes a first electrode connected to the word line; a second electrode connected to the bit line; and a selective element layer between the first electrode and the second electrode. The selective element layer includes one of Ge—Se—Te, Ge—Se—Te—As, and Ge—Se—Te—As—Si, and a composition ratio of arsenic (As) component of each of the Ge—Se—Te—As and the Ge—Se—Te—As—Si being greater than 0.01 and less than 0.17.


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