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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11150557 B1

PDFFull Text
Date of Patent:
Oct. 19, 2021

Filed:

Jun. 21, 2018

Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Naoya Hatakeyama, Shizuoka, JP;

Akiyoshi Goto, Shizuoka, JP;

Yasunori Yonekuta, Shizuoka, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/038 (2006.01); C08F 30/04 (2006.01); G03F 7/075 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/038 (2013.01); C08F 30/04 (2013.01); G03F 7/039 (2013.01); G03F 7/0397 (2013.01); G03F 7/075 (2013.01); G03F 7/0758 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); G03F 7/325 (2013.01);
Abstract

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

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