The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Oct. 15, 2019
Applicant:

Prismatic Sensors Ab, Stockholm, SE;

Inventors:

Mats Danielsson, Täby, SE;

Christel Sundberg, Stockholm, SE;

Assignee:

PRISMATIC SENSORS AB, Stockholm, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); G01N 23/041 (2018.01); G01N 23/083 (2018.01); A61B 6/00 (2006.01); H04N 5/32 (2006.01); A61B 6/03 (2006.01);
U.S. Cl.
CPC ...
G01T 1/243 (2013.01); A61B 6/032 (2013.01); A61B 6/4241 (2013.01); A61B 6/484 (2013.01); A61B 6/5235 (2013.01); G01N 23/041 (2018.02); G01N 23/083 (2013.01); G01T 1/244 (2013.01); H04N 5/32 (2013.01); G01N 2223/401 (2013.01); G01N 2223/413 (2013.01);
Abstract

An x-ray imaging system includes an x-ray source and detector. The detector is a photon counting x-ray detector, enabling detection of photon-counting events. The system acquires at least one phase contrast image based on photon-counting events. The detector includes x-ray detector sub-modules, also referred to as wafers, each including detector elements. The sub-modules are oriented in edge-on geometry with their edge directed towards the x-ray source, assuming the x-rays enter through the edge. Each sub-module or wafer has a thickness with two opposite sides of different potentials to enable charge drift towards the side, where the detector elements/pixels, are arranged. The system estimates charge diffusion from a Compton interaction or an interaction through photoeffect related to an incident x-ray photon in a sub-module or wafer of the x-ray detector, and estimates a point of interaction of the x-ray photon sub-module based on the determined estimate of charge diffusion.


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