The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Sep. 11, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Matthias Kuenle, Villach, AT;

Johannes Baumgartl, Riegersdorf, AT;

Manfred Engelhardt, Villach, AT;

Christian Illemann, Villach, AT;

Francisco Javier Santos Rodriguez, Villach, AT;

Olaf Storbeck, Dresden, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/54 (2006.01); C23C 16/455 (2006.01); C30B 25/12 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/02 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); H01L 21/02 (2006.01); C30B 29/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C23C 16/54 (2013.01); C23C 16/0209 (2013.01); C23C 16/4584 (2013.01); C23C 16/45502 (2013.01); C23C 16/45517 (2013.01); C23C 16/46 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); C30B 29/06 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01);
Abstract

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.


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