The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Oct. 18, 2017
Applicant:

Basf SE, Ludwigshafen am Rhein, DE;

Inventors:

Maraike Ahlf, Ludwigshafen, DE;

David Dominique Schweinfurth, Ludwigshafen, DE;

Lukas Mayr, Ludwigshafen, DE;

Kinga Izabela Leszczynska, Saarbrücken, DE;

David Scheschkewitz, Saarbrücken, DE;

Assignee:

BASF SE, Ludwigshafen am Rhein, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/38 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/38 (2013.01); C23C 16/401 (2013.01);
Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R, R, R, R, and Ris hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R, R, R, R, and Rare hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.


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