The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 17, 2019
Enf Technology Co., Ltd., Yongin-si, KR;
Dong Hyun Kim, Yongin-si, KR;
Hyeon Woo Park, Yongin-si, KR;
Du Won Lee, Yongin-si, KR;
Jang Woo Cho, Suwon-si, KR;
Myung Ho Lee, Hwaseong-si, KR;
Myung Geun Song, Yongin-si, KR;
ENF TECHNOLOGY CO., LTD., Yongin-si, KR;
Abstract
Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.