The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Oct. 08, 2018
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;
Dirk Rudloff, Dresden, DE;
Martin Friedrichs, Dresden, DE;
Sebastian Doering, Dresden, DE;
Arnd Huerrich, Radebeul, DE;
Abstract
In a microelectromechanical component according to the invention, at least one microelectromechanical element (), electrical contacting elements () and an insulation layer () and thereon a sacrificial layer () formed with silicon dioxide are formed on a surface of a CMOS circuit substrate () and the microelectromechanical element () is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer () which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate ().