The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
May. 30, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University R&db Foundation, Seoul, KR;
Youngbeom Kim, Suwon-si, KR;
Doohee Lee, Seoul, KR;
Jongho Lee, Seoul, KR;
Junki Lee, Suwon-si, KR;
Sangyoung Zho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
Imperfect RF pulses in a multi-spin-echo (MSE) sequence disturb prediction of relaxation times. Provided are a magnetic resonance imaging (MRI) apparatus and method of operating the same, whereby a characteristic parameter value may be acquired from MR signal data via training using an artificial neural network (ANN) and a parametric map may be generated based on the acquired characteristic parameter value. The ANN may be trained to compensate for imperfect RF pulses while providing reduced computation times to produce an output image.