The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 22, 2019
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, CN;
Cunzhu Tong, Jilin, CN;
Jiaxin Xu, Jilin, CN;
Lijie Wang, Jilin, CN;
Shili Shu, Jilin, CN;
Sicong Tian, Jilin, CN;
Xin Zhang, Jilin, CN;
Lijun Wang, Jilin, CN;
Abstract
A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.