The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jan. 23, 2019
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Toshiki Moriwaki, Kanagawa, JP;
Toru Udaka, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 51/442 (2013.01); H01L 27/14665 (2013.01); H01L 31/0224 (2013.01); H01L 31/035209 (2013.01); H01L 51/441 (2013.01); H01L 27/307 (2013.01); H01L 31/022466 (2013.01); H01L 31/022475 (2013.01); H01L 2924/0134 (2013.01);
Abstract
An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3×10 Ω/□ to 1×10Ω/□.