The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Sep. 11, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventor:
Hiroki Kawai, Inazawa Aichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/148 (2013.01); H01L 27/24 (2013.01); H01L 27/249 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01);
Abstract
According to one embodiment, a memory device includes a resistance change memory element including a first electrode, a second electrode, and an intermediate layer provided between the first electrode and the second electrode, containing germanium (Ge), tellurium (Te) and at least one element selected from lithium (Li) and sodium (Na), and at least a part of which being capable of exhibiting a crystalline state.