The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Mar. 05, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takeshi Uchida, Hiratsuka, JP;

Takako Suga, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); G03G 15/04 (2006.01); H01L 33/06 (2010.01); H01L 27/15 (2006.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0016 (2013.01); G03G 15/04036 (2013.01); H01L 27/153 (2013.01); H01L 33/06 (2013.01); H01L 33/30 (2013.01);
Abstract

A light-emitting thyristor includes a layered structure having a semiconductor DBR layer, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductive type, a third semiconductor layer, and a fourth semiconductor layer of the second conductivity type in this order on a semiconductor substrate, the third semiconductor layer has at least one fifth semiconductor layer of the first conductivity type and a multi-quantum well structure, the fifth semiconductor layer is present between the second semiconductor layer and the multi-quantum well structure, the multi-quantum well structure is formed of barrier layers and quantum well layers, and the number of the quantum well layers is greater than or equal to 10.


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