The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 30, 2020
National Tsing Hua University, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A ferroelectric field effect transistor (FeFET) device includes a semiconductor substrate and a 3D transistor. The 3D transistor includes drain and source electrodes; a channel structure that includes a channel body and a gate dielectric layer; and a gate electrode that is disposed on the gate dielectric layer and that is electrically isolated from the drain and source electrodes. The channel body is disposed between and connected to the drain and source electrodes. The gate dielectric layer covers the channel body, is made of crystalline hafnium zirconium oxide, and has a thickness ranging from 2 nm to 5 nm. The FeFET device has an on/off current ratio that is greater than 5×10.