The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Oct. 11, 2019
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Paul J. Duval, Lexington, MA (US);
John P. Bettencourt, Boxford, MA (US);
James W. McClymonds, Waltham, MA (US);
Paul M. Alcorn, Groton, MA (US);
Philip C. Balas, II, Reading, MA (US);
Michael S. Davis, Ipswich, MA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/283 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/283 (2013.01); H01L 23/3157 (2013.01);
Abstract
Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.