The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Oct. 29, 2019
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Sheng-Hwa Lee, Changhua County, TW;
Hsiu-Ming Chen, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/76224 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/4232 (2013.01); H01L 29/42356 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor structure includes a pair of active regions, a first isolation structure, a gate structure, and a pair of contacts. The first isolation structure is disposed between the active regions. The gate structure is disposed on the first isolation structure. The contacts are respectively disposed on the active regions. Each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.