The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Apr. 24, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Tetsu Negishi, Chiyoda-ku, JP;
Shoichi Kuga, Chiyoda-ku, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor apparatus includes a power semiconductor device, a resin film and a sealing insulating material. The power semiconductor device includes: a first electrode covering a first region on one main surface of the semiconductor substrate; a second electrode formed on the other main surface of the semiconductor substrate; a guard ring formed in a second region outer than the first region; and a non-conductive inorganic film located in the second region and covering the guard ring. The resin film overlaps the guard ring in a plan view, and the resin film on the non-conductive inorganic film has a thickness of 35 μm or more. The resin film is a film of a single layer, and the resin film has an outermost edge in the form of a downwardly spreading fillet. The outermost edge of the resin film is inner than an outermost edge of the semiconductor substrate.