The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 25, 2018
Applicant:
Ams Ag, Premstaetten, AT;
Inventors:
Victor Sidorov, Premstaetten, AT;
Jong Mun Park, Premstaetten, AT;
Eugene G. Dierschke, Premstaetten, AT;
Assignee:
AMS AG, Premstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14638 (2013.01); H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14654 (2013.01); H01L 31/103 (2013.01);
Abstract
The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e, hgenerated by radiation that is incident from a rear side opposite the photodetectors.