The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Mar. 17, 2020
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Kengo Hara, Sakai, JP;

Tohru Daitoh, Sakai, JP;

Hajime Imai, Sakai, JP;

Tetsuo Kikuchi, Sakai, JP;

Masahiko Suzuki, Sakai, JP;

Setsuji Nishimiya, Sakai, JP;

Masamitsu Yamanaka, Sakai, JP;

Teruyuki Ueda, Sakai, JP;

Hitoshi Takahata, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G02F 1/136209 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1288 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); G02F 1/134372 (2021.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract

A method for manufacturing an active matrix board includes (E) a step of forming a source contact hole and a drain contact hole in an interlayer insulating layer such that a portion of a source contact region of an oxide semiconductor layer and a portion of a drain contact region thereof are exposed and forming a connecting portion contact hole in the interlayer insulating layer and a lower insulating layer such that a portion of a lower conductive layer is exposed; and (F) a step of forming a source electrode, a drain electrode, and an upper conductive layer on the interlayer insulating layer; and the step (E) includes (e-1) a step of forming a photoresist film on the interlayer insulating layer and (e-2) a step of forming a photoresist layer in such a manner that the photoresist film is exposed to light using a multi-tone mask and is then developed.


Find Patent Forward Citations

Loading…