The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Jul. 15, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Haejoon Lee, Hwaseong-si, KR;

Sung-Soo Ahn, Hwaseong-si, KR;

Ha-Na Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 27/11526 (2017.01); H01L 23/522 (2006.01); H01L 27/11573 (2017.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A three-dimensional semiconductor memory device is provided. The memory device includes a substrate with a cell array region and a connection region adjacent to the cell array region, the connection region including a first pad region and a second pad region; an electrode structure including electrodes stacked on the substrate, the electrode structure including an upper portion forming an upper staircase structure; a first dummy structure laterally spaced apart from the upper portion of the electrode structure and provided on the first pad region; and a second dummy structure laterally spaced apart from the upper portion of the electrode structure and provided on the second pad region. Each of the first dummy structure and the second dummy structure includes a dummy staircase structure, and the first dummy structure is located at higher level than the second dummy structure.


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