The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Mar. 13, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Yasuhito Yoshimizu, Yokkaichi, JP;
Tomohiko Sugita, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); G11C 16/04 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0466 (2013.01); H01L 27/1157 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor storage device according to an embodiment comprises a substrate. A stack body having first conductive layers and first insulating layers alternately stacked in a first direction is provided on the substrate. A pillar part extends in the first direction in the stack body and has a memory film. An insulating member extends in the first direction at a position different from that of the pillar part in the stack body. A phosphorus-containing insulator is provided below the stack body and the insulating member.