The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
May. 18, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1085 (2013.01); H01L 27/10805 (2013.01); H01L 28/60 (2013.01);
Abstract
A method of forming a semiconductor structure includes following steps. A substrate is formed. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. The dielectric stack is etched to form an opening such that the contact of the substrate is exposed. The opening has a bottom portion and a top portion communicated to the bottom portion. The dielectric stack is etched again to expand the bottom portion of the opening.