The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 05, 2020
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Hirohiko Watanabe, Hachioji, JP;
Shunsuke Saito, Hachioji, JP;
Yoshitaka Nishimura, Azumino, JP;
Fumihiko Momose, Higashi-chikuma-gun, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C22C 13/02 (2006.01); H01L 23/053 (2006.01); B23K 35/02 (2006.01); B23K 35/26 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); B23K 35/025 (2013.01); B23K 35/0244 (2013.01); B23K 35/26 (2013.01); B23K 35/262 (2013.01); C22C 13/02 (2013.01); H01L 23/053 (2013.01); H01L 2224/2922 (2013.01); H01L 2224/29201 (2013.01); H01L 2224/29211 (2013.01); H01L 2224/29238 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2224/29272 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/3656 (2013.01);
Abstract
A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.