The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Oct. 18, 2019
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jar-Ming Ho, Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/5223 (2013.01); H01L 23/642 (2013.01);
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate and a first crack-detecting structure positioned in the substrate and comprising a first capacitor unit. The first capacitor unit comprises a first bottom conductive layer positioned in the substrate, a first capacitor insulating layer surrounding the first bottom conductive layer, and a first buried plate surrounding the first capacitor insulating layer.