The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Dec. 04, 2019
Applicant:
Newport Fab, Llc, Newport Beach, CA (US);
Inventor:
David J. Howard, Irvine, CA (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01L 23/3733 (2013.01); H01L 23/562 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate, a porous semiconductor region within the semiconductor substrate, and through-substrate via (TSV) within the porous semiconductor region. The porous semiconductor region causes the semiconductor structure and/or the TSV to withstand thermal and mechanical stresses. Alternatively, the semiconductor structure includes a semiconductor buffer ring within the porous semiconductor region, and the TSV within the semiconductor buffer ring.