The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Sep. 11, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); G01N 27/414 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); G01N 27/4146 (2013.01); H01L 21/0256 (2013.01); H01L 21/02527 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/1606 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (), a molding block (), forming, on the molding block, a thin layer () made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion () of the thin layer extending against a lateral face of the molding block, said retained portion () forming a fin that is capable of forming a channel structure of the transistor,