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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11145513 B1

PDFFull Text
Date of Patent:
Oct. 12, 2021

Filed:

Sep. 24, 2019

Method of manufacturing semiconductor device

Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Takamasa Sunda, Tokushima, JP;

Yoshinori Fukui, Tokushima, JP;

Shinya Asakawa, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Wojciech Haske

Int. Cl.
CPC ...
H01L 21/228 (2006.01); C25D 5/02 (2006.01); H01L 21/288 (2006.01); H01L 23/00 (2006.01); C25D 3/38 (2006.01); C25D 7/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); C25D 3/38 (2013.01); C25D 5/022 (2013.01); C25D 7/12 (2013.01); H01L 24/13 (2013.01); H01L 2224/11462 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a photoresist defining an opening on an upper surface of a semiconductor wafer; and forming an electrode in the opening using a plating technique, in which the step of forming the electrode includes forming a first plated layer at a first current density such that the first plated layer has a first thickness, and forming a second plated layer on an upper surface of the first plated layer at a second current density higher than the first current density such that the second plated layer has a second thickness greater than the first thickness.

Find Patent Forward Citations

Sunda, Takamasa. (2021). Method of manufacturing semiconductor device (U.S. Patent No. 11145513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11145513

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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