The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Sep. 30, 2019
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Jan Willem Hub Maes, Wilrijk, BE;

Michael Eugene Givens, Helsinki, FI;

Suvi P. Haukka, Helsinki, FI;

VamsI Paruchuri, Mesa, AZ (US);

Ivo Johannes Raaijmakers, Bilthoven, NL;

Shaoren Deng, Ghent, BE;

Andrea Illiberi, Leuven, BE;

Eva E. Tois, Espoo, FI;

Delphine Longrie, Ghent, BE;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02068 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/02315 (2013.01); H01L 21/02669 (2013.01); H01L 21/324 (2013.01); H01L 21/67213 (2013.01);
Abstract

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.


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