The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 25, 2020
Applicant:
Nissin Ion Equipment Co., Ltd., Koka, JP;
Inventor:
Yutaka Inouchi, Shiga, JP;
Assignee:
NISSIN ION EQUIPMENT CO., LTD., Koka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/244 (2006.01); H01J 37/05 (2006.01); H01J 37/10 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/05 (2013.01); H01J 37/10 (2013.01); H01J 2237/24542 (2013.01); H01J 2237/24585 (2013.01);
Abstract
A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.