The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Jul. 09, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Beomkyu Shin, Seongnam-si, KR;

Sungkyu Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/52 (2006.01); G06F 3/06 (2006.01); G11C 29/42 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11B 20/18 (2006.01); G11C 13/00 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 29/52 (2013.01); G06F 3/065 (2013.01); G11B 2020/1823 (2013.01); G11C 7/1006 (2013.01); G11C 11/5628 (2013.01); G11C 13/0069 (2013.01); G11C 16/10 (2013.01); G11C 29/42 (2013.01); G11C 2211/5646 (2013.01); G11C 2211/5647 (2013.01);
Abstract

A nonvolatile memory device performs a compare and write operation. The compare and write operation includes reading read data from memory cells, inverting first write data to generate second write data, adding a first flag bit to the first write data to generate third write data and adding a second flag bit to the second write data to generate fourth write data, performing a reinforcement operation on each of the third write data and the fourth write data to generate fifth write data and sixth write data, and comparing the read data with each of the fifth write data and the sixth write data and writing one of the fifth and sixth write data in the memory cells based on a result of the comparison.


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