The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Feb. 28, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kentaro Yoshida, Tokyo, JP;

Kazuaki Hiyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01); H02M 1/32 (2007.01); H02M 7/5387 (2007.01); H02P 27/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08128 (2013.01); H02M 1/32 (2013.01); H02M 7/53871 (2013.01); H02P 27/08 (2013.01);
Abstract

To suppress a malfunction of an overcurrent protection circuit caused by rise of a sense voltage in a mirror period immediately after turn-off of a semiconductor switching element. A semiconductor device includes: a semiconductor switching element; a sense resistor; an overcurrent protection circuit which outputs a control signal for controlling on-drive and off-drive of the semiconductor switching element based on whether a sense voltage exceeds a threshold value; and a diode which clamps the sense voltage. When the sense voltage exceeds the threshold value, the overcurrent protection circuit outputs a signal for off-driving the semiconductor switching element as the control signal.


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